1/8 may 2005 n complementary pnp-npn devices n new enhanced series n high switching speed n h fe grouping n h fe improved linearity application n general purpose circuits n audio amplifier n power linear and switching description the tip41cn is a silicon base island technology npn power transistor jedec to-220 plastic package with improved performances than the industry standard tip41c that make this device suitable for audio, powe r linear and switching applications. the complementary pnp type is tip42cn. figure 1: package figure 2: internal schematic diagram table 1: order codes # see:note on page 2 table 2: absolute maximum ratings to-220 1 2 3 part number marking package packaging tip41cn (#) tip41c nr tip41c no tip41c ny to-220 tube tip42cn (#) tip42c nr tip42c no tip42c ny to-220 tube symbol parameter value unit npn tip41cn pnp tip42cn v cbo collector-base voltage (i e = 0) 100 v v ceo collector-emitter voltage (i b = 0) 100 v v ebo emitter-base voltage (i c = 0) 5v i c collector current 6a i cm collector peak current (t p < 5ms) 10 a tip41cn tip42cn complementary silicon power transistors preliminary data rev. 1
tip41cn / tip42cn 2/8 for pnp types voltage and current values are negative. table 3: electrical characteristics (t case = 25 o c unless otherwise specified) * pulsed: pulsed duration = 300 m s, duty cycle 2 %. for pnp types voltage and current values are negative. # note: product is pre-selected in dc current gain (group r, group o and group y). stmicroelectronics reserves the right to ship either groups according to production availability. please contact your nearest stmicrolectronics sales office for delivery details. i b base current 3a p tot total dissipation at t c 25 o c 65 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter test conditions min. typ. max. unit i ceo collector cut-off current (i b = 0) v ce = 60 v 0.7 ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma i ces collector cut-off current (v be = 0) v ce = 100 v 0.4 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0 ) i c = 30 ma 100 v v ce(sat) * collector-emitter saturation voltage i c = 6 a i b = 0.6 a 1.5 v v be(on) * base-emitter voltage i c = 6 a v ce = 4 v 2 v h fe * dc current gain i c = 0.3 a v ce = 4 v i c = 3 a v ce = 4 v group r group o group y 30 15 24 42 28 44 75 symbol parameter value unit npn tip41cn pnp tip42cn
tip41cn / tip42cn 3/8 figure 3: dc current gain (npn) figure 4: dc current gain (npn) figure 5: collector-emitter saturation voltage (npn) figure 6: dc current gain (pnp) figure 7: dc current gain (pnp) figure 8: collector-emitter saturation voltage (pnp)
tip41cn / tip42cn 4/8 figure 9: base-emitter saturation voltage (npn) figure 10: bt (on) time (npn) figure 11: resistive load switching time (npn figure 12: base-emitter saturation voltage (pnp figure 13: bt (on) time (pnp) figure 14: resistive load switching time (pnp)
tip41cn / tip42cn 5/8 figure 15: resistive load switching time (npn) figure 16: collector-base e collector-emitter capacitance (npn) figure 17: resistive load switching time (pnp) figure 18: collector-base e collector-emitter capacitance (pnp)
tip41cn / tip42cn 6/8 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
tip41cn / tip42cn 7/8 table 4: version release date change designator 18-mar-2005 1 first release. 06-apr-2005 2 further curves have been added.
tip41cn / tip42cn 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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